2005-06-09 bfp540esd 1 npn silicon rf transistor preliminary data ? for highest gain low noise amplifier at 1.8 ghz ? outstanding g ms = 21.0 db noise figure f = 0.9 db ? gold metallization for high reliability ? sieget 45 - line ? exellent esd performance typical value > 1000 v (hbm) vps05605 4 2 1 3 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfp540esd aus 1=b 2=e 3=c 4=e - - sot343 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0c t a 0c v ceo 4 3.5 v collector-emitter voltage v ces 12 collector-base voltage v cbo 12 emitter-base voltage v ebo 1 collector current i c 80 ma base current i b 8 total power dissipation 1) t s 77c p tot 250 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 290 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
2005-06-09 bfp540esd 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4 4.5 - v collector-emitter cutoff current v ce = 12 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 10 a dc current gain i c = 20 ma, v ce = 3.5 v, pulse measured h fe 50 110 185 -
2005-06-09 bfp540esd 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 50 ma, v ce = 3.5 v, f = 1 ghz f t 25 34 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz c cb - 0.15 0.24 pf collector emitter capacitance v ce = 2 v, f = 1 mhz c ce - 0.41 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 0.65 - noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 2 v, f = 3 ghz, z s = z sopt f - - 0.9 1.3 1.4 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21 - db power gain, maximum available 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - 15.5 - db transducer gain i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1.8 ghz i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 3 ghz | s 21e | 2 16 - 18.5 14 - - db third order intercept point at output 2) v ce = 2 v, i c = 20 ma, f = 1.8 ghz, z s = z l = 50 ? ip 3 - 25 - dbm 1db compression point at output i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 11.5 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2005-06-09 bfp540esd 4 package sot343 1.25 ?0.1 0.1 max. 2.1 ?0.1 0.15 +0.1 -0.05 0.3 +0.1 2 ?0.2 ?0.1 0.9 12 3 4 a +0.1 0.6 acc. to +0.2 din 6784 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 0.8 1.6 1.15 0.9 manufacturer type code bga420 example pin 1 0.2 4 2.15 8 2.3 1.1 pin 1 package outline foot print marking layout packing code e6327: reel ?180 mm = 3.000 pieces/reel code e6433: reel ?330 mm = 10.000 pieces/reel month year may 2005
2005-06-09 bfp540esd 5 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen ? infineon technologies ag 2005. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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